2SK2425-E datasheet(4/7 Pages) RENESAS

Part #	2SK2425-E

Description	Silicon N Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SK2425

Rev.2.00 Sep 07, 2005 page 4 of 6

Case Temperature Tc (

°C)

– 40

0

40

80

120

160

0

0.4

0.8

1.2

1.6

2.0

5 A

2 A

Pulse Test

VGS = 10 V

ID = 10 A

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

0.1

0.2

0.5

1

2

510

0.5

1

2

5

10

20

50

Pulse Test

VDS = 10 V

Tc = 75

°C

25

°C

–25

°C

Forward Transfer Admittance

vs. Drain Current

Reverse Drain Current IDR (A)

0.2

0.5

1

2

5

10

20

5

10

20

50

100

200

500

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

010

20

30

40

50

1

10

100

1000

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

Typical Capacitance vs. Drain

Source Voltage

Gate Charge Qg (nc)

08

500

0

4

8

12

16

20

100 V

50 V

ID = 7 A

VGS

VDD = 50 V

VDD = 200 V

VDS

200 V

400

300

200

100

16

24

32

40

Dynamic Input Characteristics

Drain Current ID (A)

0.1

0.2

0.5

1

2

5

10

20

50

100

200

500

VGS = 10 V, VDD = 30 V

PW = 2

µs, duty ≤ 1 %

•

td (off)

tf

tr

td (on)

5

Switching Characteristics

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2SK2425-E Datasheet(PDF) 4 Page - Renesas Technology Corp

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