2SK2956 datasheet(3/7 Pages) RENESAS

Part #	2SK2956

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SK2956

Rev.4.01 Apr 27, 2006 page 3 of 6

Main Characteristics

Power vs. Temperature Derating

Case Temperature TC (°C)

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Drain Current ID (A)

Static Drain to Source on State

Resistance vs. Drain Current

40

30

20

10

0

50

100

150

200

0.1

0.3

1

3

10

30

100

50

40

30

20

10

0

12

34

5

50

40

30

20

10

0

24

6

8

10

5 V

10 V

1000

300

100

30

10

1

0.3

0.1

3

Ta = 25

°C

10

µs

100

µs

1 ms

Operation in

this area is

limited by RDS(on)

PW

=

10

ms

(1

shot)

4 V

VGS = 2 V

2.5 V

Pulse Test

3.5 V

3 V

Tc = –25

°C

25

°C

75

°C

VDS = 10 V

Pulse Test

DC

Opera

tion

(Tc

=

25

°C)

0.5

0.4

0.3

0.2

0.1

0

48

12

16

20

1

10

100

250

100

20

50

10

5

20

5

Pulse Test

ID = 20 A

10 A

5 A

500

200

VGS = 4 V

10 V

Pulse Test

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