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2SK2958L-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SK2958L-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK2958(L), 2SK2958(S) Rev.4.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak current ID(pulse) Note1 300 A Body-drain diode reverse drain current IDR 75 A Channel dissipation Pch Note2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 30 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±1 6V, VDS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10V RDS(on) — 5.5 7.0 m Ω ID = 40 A, VGS = 10V Note3 Static drain to source on state resistance RDS(on) — 9.0 14.0 m Ω ID = 40 A, VGS = 4V Note3 Forward transfer admittance |yfs| 35 60 — S ID = 40 A, VDS = 10V Note3 Input capacitance Ciss — 4100 — pF Output capacitance Coss — 2700 — pF Reverse transfer capacitance Crss — 800 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 45 — ns Rise time tr — 430 — ns Turn-off delay time td(off) — 460 — ns Fall time tf — 440 — ns VGS = 10 V, ID = 40 A, RL = 0.25 Ω Body–drain diode forward voltage VDF — 1.0 — V IF = 75A, VGS = 0 Body–drain diode reverse recovery time trr — 90 — ns IF = 75A, VGS = 0 diF/ dt = 50 A/ µs Note: 3. Pulse test |
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