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2SK3419-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3419-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3419 Rev.2.00 Sep 07, 2005 page 4 of 7 20 4 8 12 16 –50 0 50 100 150 200 0 0.1 0.3 3 10 30 100 500 100 200 20 50 10 2 1 5 0.5 1 25°C Tc = –25°C 75°C VGS = 10 V 10 A, 20 A, 50 A 10 A, 20 A ID = 50 A Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.1 0.3 1 3 10 30 100 1000 200 500 100 20 50 10 0 10203040 50 30000 10000 1000 3000 100 80 60 40 20 0 0 20 80 160 240 320 400 0 4 8 16 12 1000 200 500 10 20 50 100 0.1 0.3 1 3 10 30 100 300 100 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 90 A VDS VGS VDD = 50 V 25 V 10 V di / dt = 50 A / µs VGS = 0, Ta = 25°C tr td(on) td(off) tf VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Drain Current ID (A) Switching Characteristics Gate Charge Qg (nC) Dynamic Input Characteristics VDD = 50 V 25 V 10 V 10 V VGS = 4 V |
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