3SK296ZQ-TL-E datasheet(6/8 Pages) RENESAS

Part #	3SK296ZQ-TL-E

Description	Silicon N-Channel Dual Gate MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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6 / 8 page

3SK296

Rev.3.00 Aug 10, 2005 page 6 of 7

S Parameter

(VDS = 4 V, VG2S = 3 V, ID = 10 mA, ZO = 50

Ω)

S11

S21

S12

S22

Freq.

(MHz)

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

MAG.

ANG.

100

0.999

–6.1

1.98

172.2

0.00094

79.2

0.989

–4.2

150

0.998

–9.1

1.97

168.4

0.00189

80.4

0.987

–6.1

200

0.992

–11.9

1.96

165.0

0.00230

79.5

0.986

–7.9

250

0.988

–14.8

1.96

161.0

0.00286

79.9

0.984

–9.8

300

0.985

–17.9

1.94

157.1

0.00364

75.2

0.981

–11.5

350

0.976

–20.6

1.92

153.7

0.00353

71.8

0.978

–13.4

400

0.971

–23.2

1.91

149.9

0.00419

70.7

0.975

–15.2

450

0.964

–26.3

1.88

146.8

0.00495

65.5

0.972

–17.2

500

0.961

–29.1

1.87

142.8

0.00509

62.7

0.968

–19.1

550

0.951

–32.2

1.86

139.4

0.00530

66.6

0.963

–20.8

600

0.949

–35.0

1.86

136.1

0.00550

63.8

0.960

–22.8

650

0.935

–37.6

1.81

132.9

0.00601

58.2

0.956

–24.5

700

0.933

–40.5

1.78

129.4

0.00582

60.6

0.950

–26.3

750

0.923

–42.9

1.77

125.7

0.00572

58.5

0.945

–28.0

800

0.916

–45.8

1.75

122.6

0.00553

56.3

0.941

–29.9

850

0.908

–49.0

1.72

119.1

0.00514

56.3

0.936

–31.7

900

0.900

–51.2

1.70

115.8

0.00543

52.9

0.930

–33.4

950

0.890

–54.0

1.67

112.6

0.00506

52.4

0.924

–35.2

1000

0.876

–56.4

1.65

109.3

0.00469

51.9

0.919

–37.0

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