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2SC5773JR-TL-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SC5773JR-TL-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 11 page  2SC5773 Rev.3.00 May 09, 2006 page 2 of 10 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 15 — — V IC = 10 µA, IE = 0 Collector cutoff current ICBO — — 1 µA VCB = 12 V, IE = 0 Collector cutoff current ICEO — — 1 mA VCE = 6 V, RBE = ∞ Emitter cutoff current IEBO — — 10 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 80 120 160 VCE = 5 V, IC = 50 mA Collector output capacitance Cob — 1.25 1.8 pF VCB = 5 V, IE = 0 f = 1 MHz Reverse transfer capacitance Cre — 0.98 — pF VCB = 5 V, IE = 0 f = 1 MHz Gain bandwidth product fT 8 10.8 — GHz VCE = 5 V, IC = 50 mA f = 1 GHz S21 parameter |S21| 2 — 11 — dB VCE = 5 V, IC = 50 mA f = 1 GHz Power gain PG 9 11.9 — dB VCE = 5 V, IC = 50 mA f = 900 MHz Noise figure NF — 1.1 1.9 dB VCE = 5 V, IC = 5 mA f = 900 MHz |
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