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2SD468 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SD468
Description  Silicon NPN Epitaxial
Download  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD468 Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SD468
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
Maximum Collector Dissipation Curve
Ambient Temperature Ta (
°C)
0.8
1.2
0.4
0
50
100
150
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
1,000
800
600
400
200
0
0.4
IB = 0
1mA
2
3
4
5
6
7
1.2
1.6
0.8
1.4
P
C =
0.9
W
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
0
1,000
300
100
30
10
3
1
0.4
0.8
0.2
0.6
1.0
VCE = 2 V
Ta = 75
°C
25
°C
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
VCE = 2 V
Ta = 75
°C
25
°C
5,000
2,000
1,000
500
200
100
50
20
10
5
1
10
100
1,000
330
300
Collector to Emitter Saturation
Voltage vs. Collector Current
Collector Current IC (mA)
1
10
100
1,000
25
°C
Ta = 75
°C
IC = 10 IB
0.25
0.20
0.15
0.10
0.05
0
330
300
Gain Bandwidth Product vs.
Collector Current
Collector Current IC (mA)
1,000
30
100
10
300
300
200
100
0
VCE = 2 V


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