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2SD1209K Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SD1209K Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1209(K) Silicon NPN Epitaxial, Darlington REJ03G0783-0200 (Previous ADE-208-1143) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline 1. Emitter 2. Collector 3. Base RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 3 2 1 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A Collector peak current iC(peak) 2 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C |
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