2SD1368CCTL-E datasheet(2/6 Pages) RENESAS

Part #	2SD1368CCTL-E

Description	Silicon NPN Epitaxial

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 6 page

2SD1368

Rev.2.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

100

—

V

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

50

—

V

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

6

—

V

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.1

µA

VCB = 80 V, IE = 0

Emitter cutoff current

IEBO

—

0.1

µA

VEB = 4 V, IC = 0

DC current transfer ratio

hFE*

1

160

—

500

VCE = 2 V, IC = 0.1 A

Collector to emitter saturation voltage

VCE(sat)

—

0.3

V

IC = 1 A, IB = 0.1 A, Pulse

Base to emitter saturation voltage

VBE(sat)

—

1.2

V

IC = 1 A, IB = 0.1 A, Pulse

Gain bandwidth product

fT

—

100

—

MHz

VCE = 2 V, IC = 10 mA, Pulse

Collector output capacitance

Cob

—

20

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

Note:

1. The 2SD1368 is grouped by hFE as follows.

Mark

CB

CC

hFE

160 to 320

250 to 500

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