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2SD1421EDTR-E Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # 2SD1421EDTR-E
Description  Silicon NPN Epitaxial
Download  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD1421EDTR-E Datasheet(HTML) 3 Page - Renesas Technology Corp

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2SD1421
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
50
100
150
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
1.2
0.8
0.4
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
0
1020304050
Collector to Emitter Voltage VCE (V)
IB = 0
0.5 mA
1.0
1.5
2.0
2.5
3.0
4.0
5.0
3.5
Pulse
Typical Transfer Characteristics
Base to Emitter Voltage VBE (V)
1
2
5
10
20
50
200
500
100
0
0.2
0.4
0.6
0.8
1.0
VCE = 5 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
1
3
10
30
100 300 1,000 3,000
0
50
100
150
200
250
300
VCE = 5 V
Pulse
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
1
3
10
30
100
300
1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
IC = 10 IB
Pulse
Gain Bandwidth Product vs.
Collector Current
Collector Current IC (mA)
10
30
100
300
1,000
0
40
80
120
160
200
240
VCE = 5 V


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