STB25NM60N-1 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STB25NM60N-1

Description	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N

4/18

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

dv/dt (1)

1.

Characteristic value at turn off on inductive load

Drain source voltage slope

VDD = 480 V, ID = 21 A,

VGS = 10 V

48

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, @125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 10.5 A

0.130 0.160

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS=15 V, ID =11 A

17

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

2400

200

25

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

310

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID =21 A,

VGS = 10 V,

(see Figure 19)

84

14

44

nC

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

1.6

Ω

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