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STB185N10F3 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB185N10F3
Description  N-channel 100 V, 4.0 m廓, 120 A, D2PAK, TO-220 STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB185N10F3 Datasheet(HTML) 5 Page - STMicroelectronics

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STB185N10F3 - STP185N10F3
Electrical characteristics
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Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
120
480
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD=120 A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120 A,
di/dt = 100 A/µs,
VDD=30 V, Tj=150°C
(see
Figure 4)
TBD
TBD
TBD
ns
µC
A


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