2SJ181L datasheet(4/8 Pages) RENESAS

Part #	2SJ181L

Description	Silicon P Channel MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 8 page

2SJ181(L), 2SJ181(S)

Rev.2.00 Sep 07, 2005 page 4 of 7

40

–40

0

40

80

120

160

Case Temperature

Tc (°C)

0

8

16

24

32

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

VGS = –10 V

ID = –0.5 A

–0.2 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

2

1

0.2

0.5

0.1

0.02

0.05

–0.05 –0.1 –0.2

–0.5

–1

–2

–5

Tc = –25°C

75°C

VDS = –20 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.05 –0.1 –0.2

–0.5

–1

–2

–5

1000

500

200

50

100

20

10

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

0

–10

–20

–30

–40

–50

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

1000

300

100

30

10

3

1

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

–0

0

Gate Charge

Qg (nc)

0

–20

–16

–12

–8

–4

–1000

–800

–600

–400

–200

Dynamic Input Characteristics

4

8

12

16

20

VDS

VGS

VDD = –100 V

–250 V

–400 V

ID = –0.5 A

500

200

100

20

50

10

5

–0.1 –0.2

–0.5

–1

–2

–5

–0.05

tf

tr

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

–0.1 A

VDD = –100 V

–250 V

–400 V

VGS = –10 V, VDD = –30 V

PW = 5

µs, duty ≤ 1 %

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