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2SJ386TZ-E Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SJ386TZ-E Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SJ386 Rev.2.00 Sep 07, 2005 page 2 of 5 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –3 A Drain peak current ID (pulse) Note 1 –5 A Body to drain diode reverse drain current IDR –3 A Channel dissipation Pch 0.9 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –30 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –24 V, VGS = 0 Gate to source cutoff voltage VGS (off) –1.0 — –2.5 V ID = –1 mA, VDS = –10 V RDS (on) — 0.3 0.4 Ω ID = –2 A, VGS = –10 V Note 2 Static drain to source on state resistance RDS (on) — 0.55 0.8 Ω ID = –2 A, VGS = –4 V Note 2 Forward transfer admittance |yfs| 1.0 1.7 — S ID = –1 A, VDS = –10 V Note 2 Input capacitance Ciss — 177 — pF Output capacitance Coss — 120 — pF Reverse transfer capacitance Crss — 59 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 8 — ns Rise time tr — 28 — ns Turn-off delay time td (off) — 45 — ns Fall time tf — 60 — ns ID = –2 A VGS = –10 V RL = 15 Ω Note: 2. Pulse test |
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