Electronic Components Datasheet Search |
|
2SJ479S Datasheet(PDF) 4 Page - Renesas Technology Corp |
|
2SJ479S Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ479(L), 2SJ479(S) Rev.3.00 Jun 05, 2006 page 4 of 7 0.10 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.02 0.04 0.06 0.08 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –20 A ID = –30 A –5 A, –10 A, –20 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 50 20 5 10 0.5 1 2 0.1 0.2 –0.1 –0.2 –0.5 –1 –10 –5 –2 –50 –20 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.2 –0.5 –1 –2 –5 –50 –20 –10 1000 500 200 50 100 20 5 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0 –4 –8 –12 –16 –20 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 200 100 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –50 –40 –30 –20 –10 Dynamic Input Characteristics 16 32 48 64 80 VDS VGS 1000 200 500 100 20 50 10 5 –0.2 –0.5 –1 –2 –20 –10 –5 –50 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –5 V –10 V –25 V VDD = –25 V –10 V –5 V –10 V VGS = –4 V –5 A, –10 A VGS = –10 V, VDD = –10 V duty ≤ 1 % |
Similar Part No. - 2SJ479S |
|
Similar Description - 2SJ479S |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |