REJ03C0343-0003 Rev.0.03 Apr.11,2008

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R1Q4A3636B/R1Q4A3618B

36-Mbit DDRII SRAM

2-word Burst

REJ03C0343-0003

Preliminary

Rev. 0.03

Apr.11, 2008

Description

The R1Q4A3636B is a 1,048,576-word by 36-bit, the R1Q4A3618B is a 2,097,152-word by 18-bit synchronous double

data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It

integrates unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock

pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which

require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are

packaged in 165-pin plastic FBGA package.

Features

• 1.8 V ± 0.1 V power supply for core (V

• 1.4 V to V

• DLL circuitry for wide output data valid window and future frequency scaling

• Pipelined double data rate operation

• Common data input/output bus

• Two-tick burst for low DDR transaction size

• Two input clocks (K and /K) for precise DDR timing at clock rising edges only

• Two output clocks (C and /C) for precise flight time and clock skew matching-clock and data delivered together to

receiving device

• Internally self-timed write control

• Clock-stop capability with µs restart

• User programmable impedance output

• Fast clock cycle time: 3.3 ns (300 MHz)/4.0 ns (250 MHz)/ 5.0 ns (200 MHz)/6.0 ns (167 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest

Renesas Technology's Sales Dept. regarding specifications.