2SK3210 datasheet(5/9 Pages) RENESAS

Part #	2SK3210

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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5 / 9 page

2SK3210(L), 2SK3210(S)

Rev.3.00 Sep. 30, 2004 page 5 of 8

0

0.4

0.8

1.2

1.6

2.0

25

50

75

100

125

150

0

VGS = 10 V

50

40

30

20

10

IAP = 30 A

VDD = 50 V

duty < 0.1 %

Rg > 50

Ω

D. U. T

Rg

I

Monitor

AP

V

Monitor

DS

VDD

50

Ω

Vin

15 V

0

I D

VDS

I AP

V(BR)DSS

L

VDD

EAR =

× L × I

AP

2

×

2

1

V

– V

DSS

DD

100

80

60

40

20

0, –5 V

5 V

Pulse Test

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Channel Temperature Tch (

°C)

Maximum Avalanche Energy vs.

Channel Temperature Derating

Avalanche Test Circuit

Avalanche Waveform

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

0.3

0.1

0.03

0.01

10

µ

100

µ

1 m

10 m

100 m

1

10

DM

P

PW

T

D =

PW

T

θch – c(t) = γs (t) × θch – c

θch – c = 1.25°C/W, Tc = 25°C

Tc = 25

°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pu

lse

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2SK3210 Datasheet(PDF) 5 Page - Renesas Technology Corp

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