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2SK3210 Datasheet(PDF) 5 Page - Renesas Technology Corp |
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2SK3210 Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 9 page 2SK3210(L), 2SK3210(S) Rev.3.00 Sep. 30, 2004 page 5 of 8 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 0 VGS = 10 V 50 40 30 20 10 IAP = 30 A VDD = 50 V duty < 0.1 % Rg > 50 Ω D. U. T Rg I Monitor AP V Monitor DS VDD 50 Ω Vin 15 V 0 I D VDS I AP V(BR)DSS L VDD EAR = × L × I AP 2 × 2 1 V V – V DSS DSS DD 100 80 60 40 20 0, –5 V 5 V Pulse Test Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Test Circuit Avalanche Waveform Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DM P PW T D = PW T θch – c(t) = γs (t) × θch – c θch – c = 1.25°C/W, Tc = 25°C Tc = 25 °C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pu lse |
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