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RQJ0603LGDQATL-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQJ0603LGDQATL-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.4.00, May 26, 2006, page 1 of 6 RQJ0603LGDQA Silicon P Channel MOS FET Power Switching REJ03G1274-0400 Rev.4.00 May 26, 2006 Features • Low on-resistance RDS(on) = 158 m Ω typ (V GS = –10 V, ID = –0.9 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 2 1 1 3 3 Note: Marking is “LG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS +10 / –20 V Drain current ID –1.8 A Drain peak current ID(Pulse) Note1 –4.5 A Body - drain diode reverse drain current IDR –1.8 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) |
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