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RQK0204TGDQA Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RQK0204TGDQA Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  Rev.3.00 Jun 12, 2006 page 1 of 6 RQK0204TGDQA Silicon N Channel MOS FET Power Switching REJ03G1324-0300 Rev.3.00 Jun 12, 2006 Features • Low on-resistance RDS(on) = 100 m Ω typ (V GS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Source 2. Gate 3. Drain S D G 2 2 1 1 3 3 Note: Marking is “TG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12 V Drain current ID 2.3 A Drain peak current ID(pulse) Note1 8.0 A Body - drain diode reverse drain current IDR 2.3 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) |
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