RJL5020DPK datasheet(1/4 Pages) RENESAS

Part #	RJL5020DPK

Description	Silicon N Channel MOSFET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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REJ03G1733-0400 Rev.4.00 Aug 29, 2008

Page 1 of 3

RJL5020DPK

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1733-0400

Rev.4.00

Aug 29, 2008

Features

• Built-in fast recovery diode

• Low on-resistance

• Low leakage current

• High speed switching

Outline

RENESAS Package code: PRSS0004ZE-A

(Package name:TO-3P)

1

2

3

D

S

G

1. Gate

2. Drain (Flange)

3. Source

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

500

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

38

A

Drain peak current

ID (pulse)

Note1

114

A

Body-drain diode reverse drain current

IDR

38

A

Body-drain diode reverse drain peak current

IDR (pulse)

Note1

114

A

Avalanche current

IAP

Note3

12.5

A

Avalanche energy

EAR

Note3

8.6

mJ

Channel dissipation

Pch

Note2

200

W

Channel to case thermal impedance

θch-c

0.625

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. STch = 25

°C, Tch ≤ 150°C

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