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RJL6020DPK-00-T0 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJL6020DPK-00-T0
Description  Silicon N Channel MOSFET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJL6020DPK-00-T0 Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJL6020DPK
REJ03G1618-0200 Rev.2.00 Feb 18, 2008
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
600
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
10
µA
VDS = 600 V, VGS = 0
Gate to source leak current
IGSS
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
4.0
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
0.17
0.21
ID = 15 A, VGS = 10 V
Note4
Input capacitance
Ciss
4750
pF
Output capacitance
Coss
465
pF
Reverse transfer capacitance
Crss
53
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
44
ns
Rise time
tr
64
ns
Turn-off delay time
td(off)
206
ns
Fall time
tf
121
ns
ID = 15 A
VGS = 10 V
RL = 20
Rg = 10
Total gate charge
Qg
130
nC
Gate to source charge
Qgs
21
nC
Gate to drain charge
Qgd
53
nC
VDD = 480 V
VGS = 10 V
ID = 30 A
Body-drain diode forward voltage
VDF
0.96
1.60
V
IF = 30 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
180
ns
IF = 30 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 4. Pulse test


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