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RJM0306JSP-00-J0 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # RJM0306JSP-00-J0
Description  Silicon N Channel MOSFET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJM0306JSP-00-J0 Datasheet(HTML) 5 Page - Renesas Technology Corp

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RJM0306JSP
REJ03G1571-0100 Rev.1.00 Nov 16, 2007
Page 5 of 12
Main Characteristics
MOS1, 2 (Nch)
10
1
0.1
110
100
10
5
05
10
10
1
0.1
0.01
0.001
0.0001
0.00001
0
12
3
5
4
0.01
100
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
0.1
0.001
100
µs
1 ms
Ta = 25
°C
1 shot Pulse
10 µ
s
Note6
DC
Operation
(PW
≤ 10
s)
0.1
1
100
10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
10
1000
PW
=
10
ms
(1shot)
VGS = 0 V
Pulse Test
3.8 V
4.2 V
4.5 V
3.2 V
2.8 V
10 V
Pulse Test
VGS = 4 V
10 V
4.5 V
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
200
−50 −25 0
25
50
75
100 125 150
0
50
150
100
010
20
40
50
30
1000
100
10
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
VDS = 10 V
Pulse Test
Tc = 150
°C
25
°C
−40°C
VGS = 4 V
4.5 V
10 V
Pulse Test
ID = 2 A
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
Operation in
this area is
limited by R
DS (on)
Note 6: When using the glass epoxy board
(FR4 40
× 40 × 1.6 mm)


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