RJP5001APP-00-T2 datasheet(2/5 Pages) RENESAS

Part #	RJP5001APP-00-T2

Description	Nch IGBT for Strobe Flash

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJP5001APP

REJ03G1710-0100 Rev.1.00 Jul 03, 2008

Page 2 of 4

Electrical Characteristics

(Tj = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter breakdown voltage

V(BR)CES

500

—

V

IC = 100

µA, VGE = 0 V

Collector-emitter leakage current

ICES

—

10

µA

VCE = 500 V, VGE = 0 V

Gate-emitter leakage current

IGES

—

±0.1

µA

VGE =

±17 V, VCE = 0 V

Gate-emitter threshold voltage

VGE(th)

1.3

—

2.7

V

VCE = 10 V, IC = 1 mA

Collector-emitter saturation voltage

VCE(sat)

—

4.7

10

V

IC = 300 A, VGE = 12 V

Input capacitance

Ciss

—

2050

—

pF

Output capacitance

Coss

—

130

—

pF

Reverse transfer capacitance

Crss

—

12

—

pF

VDS = 25 V

VGS = 0

f = 1 MHz

Turn-on delay time

td(on)

—

0.1

—

µs

Rise time

tr

—

0.5

—

µs

Turn-off delay time

td(off)

—

0.2

—

µs

Fall time

tf

—

0.8

—

µs

VDD = 300 V

ID = 12 A

VGS = 350 V

RG = 25

Ω

Performance Curves

Gate-Emitter Voltage VGE (V)

Maximum Pulse Collector Current

0

100

200

300

400

020

4

8

12

16

CM = 2000 µF

Tc

≤ 70°C

RG = 30 Ω

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