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RJP5001APP-00-T2 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJP5001APP-00-T2 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page RJP5001APP REJ03G1710-0100 Rev.1.00 Jul 03, 2008 Page 2 of 4 Electrical Characteristics (Tj = 25°C) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-emitter breakdown voltage V(BR)CES 500 — — V IC = 100 µA, VGE = 0 V Collector-emitter leakage current ICES — — 10 µA VCE = 500 V, VGE = 0 V Gate-emitter leakage current IGES — — ±0.1 µA VGE = ±17 V, VCE = 0 V Gate-emitter threshold voltage VGE(th) 1.3 — 2.7 V VCE = 10 V, IC = 1 mA Collector-emitter saturation voltage VCE(sat) — 4.7 10 V IC = 300 A, VGE = 12 V Input capacitance Ciss — 2050 — pF Output capacitance Coss — 130 — pF Reverse transfer capacitance Crss — 12 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 0.1 — µs Rise time tr — 0.5 — µs Turn-off delay time td(off) — 0.2 — µs Fall time tf — 0.8 — µs VDD = 300 V ID = 12 A VGS = 350 V RG = 25 Ω Performance Curves Gate-Emitter Voltage VGE (V) Maximum Pulse Collector Current 0 100 200 300 400 020 4 8 12 16 CM = 2000 µF Tc ≤ 70°C RG = 30 Ω |
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