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RJJ0101DPD Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJJ0101DPD
Description  P Channel Power MOS FET High Speed Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJJ0101DPD Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJJ0101DPD
REJ03G1580-0200 Rev.2.00 Nov 11, 2007
Page 3 of 6
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
–16
–12
–8
–4
0
0
–1
–2
–5
–4
–3
25
°C
75
°C
VDS = –10 V
Pulse Test
VGS = –1.8 V
–10 V
–2.5 V
–3 V
–4.5 V
Pulse Test
–2 V
–2.2 V
Tc = –25
°C
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
20
16
12
8
4
0
50
100
150
200
–0.1
–100
–10
–1
–0.1
–1
–10
–100
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–100
–150
–200
–50
–250
0
–2
–4
–6
–10
–8
Ta = 25
°C
–4.0 A
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
10
1
–0.1
–1
–10
1000
100
VGS = –1.8 V
–2.5 V
–4.5 V
Pulse Test
Ta = 25
°C
–1.5 A
–1.0 A
Case Temperature Tc (
°C)
PW
=
1
ms
Operation in
this area is
limited by R
DS(on)
Ta = 25
°C
1 shot Pulse
10
µs


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