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RJJ0621DPP-00-T2 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJJ0621DPP-00-T2 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJJ0621DPP REJ03G1624-0200 Rev.2.00 Jun 16, 2008 Page 4 of 6 Case Temperature Tc ( °C) Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current –25 25 075 50 100 125 150 0 20 40 60 80 100 120 –0.1 –1 –100 –10 10 100 1 0.1 Tc = –25 °C 75 °C 25 °C VGS = –10 V Pulse Test VDS = –10 V Pulse Test ID = –25 A Drain Current ID (A) Switching Characteristics 1000 10 100 1 –100 –10 –1 tf tr td(off) td(on) VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1% RG = 25 Ω Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Body-Drain Diode Reverce Recovery Time –1 –10 –100 1000 100 10 1 di/dt = –100 A/ µs VGS = 0 V Tc = 25 °C Drain to Source Voltage VDS (V) –1 –10 –100 1000 100 10 1 –80 –40 0 0 24 32 816 40 –16 –8 –20 –4 –60 –12 0 ID = –25 A Gate Charge Qg (nc) Dynamic Input Characteristics VDD = –60 V –30 V –10 V VDD = –60 V –10 V –30 V –5 A –12.5 A Ciss Coss Crss VGS = 0 f = 1 MHz |
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