RJJ0621DPP-00-T2 datasheet(4/7 Pages) RENESAS

Part #	RJJ0621DPP-00-T2

Description	P Channel Power MOS FET High Speed Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

RJJ0621DPP

REJ03G1624-0200 Rev.2.00 Jun 16, 2008

Page 4 of 6

Case Temperature Tc (

°C)

Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–25

25

075

50

100

125 150

0

20

40

60

80

100

120

–0.1

–1

–100

–10

10

100

1

0.1

Tc = –25

°C

75

°C

25

°C

VGS = –10 V

Pulse Test

VDS = –10 V

Pulse Test

ID = –25 A

Drain Current

ID (A)

Switching Characteristics

1000

10

100

1

–100

–10

–1

tf

tr

td(off)

td(on)

VGS = –10 V, VDD = –30 V

PW = 5 µs, duty ≤ 1%

RG = 25 Ω

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Body-Drain Diode Reverce Recovery Time

–1

–10

–100

1000

100

10

1

di/dt = –100 A/

µs

VGS = 0 V

Tc = 25

°C

Drain to Source Voltage VDS (V)

–1

–10

–100

1000

100

10

1

–80

–40

0

24

32

816

40

–16

–8

–20

–4

–60

–12

0

ID = –25 A

Gate Charge Qg (nc)

Dynamic Input Characteristics

VDD = –60 V

–30 V

–10 V

VDD = –60 V

–10 V

–30 V

–5 A

–12.5 A

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

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RJJ0621DPP-00-T2 Datasheet(PDF) 4 Page - Renesas Technology Corp

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