RJJ1011DPD-00-J2 datasheet(1/7 Pages) RENESAS

Part #	RJJ1011DPD-00-J2

Description	P Channel Power MOS FET High Speed Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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REJ03G1623-0200 Rev.2.00 Jun 16, 2008

Page 1 of 6

RJJ1011DPD

P Channel Power MOS FET

High Speed Switching

REJ03G1623-0200

Rev.2.00

Jun 16, 2008

Features

• V

DSS : –100 V

• R

DS(on) : 0.30

Ω (Max)

• I

D : –6 A

• Surface mount package (MP-3A)

Outline

RENESAS Package code: PRSS0004ZA-A

(Package name: MP-3A)

1. Gate

2. Drain

3. Source

4. Drain

1

3

2

4

1

2, 4

3

Application

• Motor control, Solenoid control, DC-DC converter, etc.

Absolute Maximum Ratings

(Tc = 25°C)

Item

Symbol

Ratings

Unit

Conditions

Drain to source voltage

VDSS

–100

V

VGS = 0 V

Gate to source voltage

VGSS

±20

V

VDS = 0 V

Drain current (DC)

ID

–6

A

Drain current (Pulsed)*

1

ID(pulse)

–12

A

Avalanche current

IAP

–6

A

L = 100

µH

Channel dissipation

Pch

30

W

Channel to case thermal impedance

θch-c

4.17

°C/W

Channel temperature

Tch

–55 to +150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Pulse width limited by safe operating area.

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