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RJK0301DPB Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0301DPB Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page  RJK0301DPB Rev.9.00 Apr 19, 2006 page 4 of 6 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics 010 30 20 10000 3000 1000 300 100 30 10 VGS = 0 f = 1 MHz 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 0 Crss Coss Ciss ID = 60 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V 10 8 6 4 2 –25 0 25 50 75 100 125 150 0 ID = 5 A, 10 A, 20 A VGS = 4.5 V 10 V Pulse Test 5 A, 10 A, 20 A Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 100 80 60 40 20 25 50 75 100 125 150 0 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 Pulse Test 5 V VGS = 0, –5V 10 V IAP = 30 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω |
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