RQK0302GGDQA datasheet(3/7 Pages) RENESAS

Part #	RQK0302GGDQA

Description	Silicon N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RQK0302GGDQA

Rev.4.00 Jun 15, 2006 page 3 of 6

Main Characteristics

Ambient Temperature Ta (

°C)

*When using the glass epoxy board (FR-4: 40

× 40 × 1 mm)

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics (1)

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics (2)

Gate to Source Voltage VGS (V)

Gate to Source Cutoff Voltage vs.

Case Temperature

Case Temperature Tc (

°C)

0

0.4

0.2

0.6

1.0

0.8

1.2

0

25

50

75

100

125

150

0.01

0.1

1

10

0.1

1

10

100

0.01

100

3.8 V

10 V

3.6 V

3.2 V

3.4 V

2.7 V

V

GS = 0 V

5

10

4

8

3

6

2

4

1

2

0

4.5 V

0

1

2

3

4

5

3

3.5

1

1.5

2

2.5

0.0001

0.001

0.01

0.1

1.0

1

1.5

0

0.5

2

2.5

3

1

1.5

0.5

2

2.5

–25

0

25

50

75

100 125 150

Pulse Test

Tc = 25

°C

VDS = 10 V

Pulse Test

4.0 V

–25

°C

Tc = 75

°C

VDS = 10 V

Pulse Test

ID = 10 mA

1 mA

0.1 mA

3.0 V

VDS = 10 V

Pulse Test

Tc = 75

°C

25

°C

–25

°C

4

25

°C

Tc = 25

°C

100

µs

PW

=

10

ms

DC

Operation

Operation in this area

is limited by RDS(on)

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RQK0302GGDQA Datasheet(PDF) 3 Page - Renesas Technology Corp

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