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RQK0609CQDQS Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RQK0609CQDQS Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RQK0609CQDQS REJ03G1622-0100 Rev.1.00 Mar 03, 2008 Page 4 of 7 Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (1) Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Case Temperature (2) Case Temperature Tc ( °C) Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Zero Gate Voltage Drain current vs. Case Temperature Case Temperature Tc ( °C) 10 100 1000 0.1 1 100 10 –25 0 25 50 75 100 125 150 1 10 100 10000 1000 10 V 4.5 V VGS = 2.5 V Pulse Test VGS = 0 V VDS = 60 V 0 200 400 600 02 4 6 8 10 Pulse Test Tc = 25 °C 40 60 100 80 120 140 160 180 –25 0 25 50 75 100 125 150 –25 0 25 50 75 100 125 150 0.1 10 1 100 0.01 0.1 100 10 1 –25 °C Tc = 75 °C 25 °C Pulse Test VDS = 10 V 1.2 A 2.0 A ID = 4.0 A 0.5 A 1.0 A Pulse Test Tc = 25 °C 40 60 100 80 120 140 160 180 1.5 A 1.5 A 2.0 A 2.0 A ID = 4.0 A ID = 4.0 A Pulse Test VGS = 4.5 V 0.5A 0.5A 1.0 A 1.0 A Pulse Test VGS = 2.5 V |
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