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M38D26FDXXXHP Datasheet(PDF) 3 Page - Renesas Technology Corp |
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M38D26FDXXXHP Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 136 page Rev.3.02 Apr 10, 2008 Page 3 of 131 REJ03B0177-0302 38D2 Group NOTE: 1. 12.5 MHz < f(XIN) ≤ 16 MHz is not available in the frequency/2 mode. Table 1 Performance overview Parameter Function Number of basic instructions 71 Instruction execution time 0.32 μs (Minimum instruction, Oscillation frequency 12.5 MHz) Oscillation frequency 16 MHz (Maximum)(1) Memory sizes (QzROM version) ROM 16 K to 60 K bytes RAM 640 to 2048 bytes Memory sizes (Flash memory version) ROM 60 K bytes RAM 2048 bytes I/O port P0-P5, P60-P62 8-bit × 6, 3-bit × 1 (24 pins sharing SEG) Interrupt 18 sources, 16 vectors (includes key input interrupt) Timer 8-bit × 4, 16-bit × 2 Serial Interface 8-bit × 2 (UART or Clock-synchronized) PWM 10-bit × 2, 16-bit × 1 (common to IGBT output) A/D converter 10-bit × 8 (operated in low-speed mode) Watchdog timer 8-bit × 1 ROM correction function 32 bytes × 2 vectors LED direct drive port 8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA) LCD drive control circuit Bias 1/2, 1/3 Duty 2, 3, 4 Common output 4 Segment output 24 Main clock generating circuits Built-in (connect to external ceramic resonator or on-chip oscillator) Sub-clock generating circuits Built-in (connect to external quartz-crystal oscillator) Power source voltage (QzROM version) In frequency/2 mode (1) f(XIN) ≤ 12.5 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 4.0 to 5.5 V f(XIN) ≤ 4 MHz 2.0 to 5.5 V f(XIN) ≤ 2 MHz 1.8 to 5.5 V In frequency/4 mode f(XIN) ≤ 16 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 2.0 to 5.5 V f(XIN) ≤ 4 MHz 1.8 to 5.5 V In frequency/8 mode f(XIN) ≤ 16 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 2.0 to 5.5 V f(XIN) ≤ 4 MHz 1.8 to 5.5 V In low-speed mode 1.8 to 5.5 V Power source voltage (Flash memory version) In frequency/2 mode (1) f(XIN) ≤ 12.5 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 4.0 to 5.5 V f(XIN) ≤ 4 MHz 2.7 to 5.5 V In frequency/4 mode f(XIN) ≤ 16 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 2.7 to 5.5 V In frequency/8 mode f(XIN) ≤ 16 MHz 4.5 to 5.5 V f(XIN) ≤ 8 MHz 2.7 to 5.5 V In low-speed mode 2.7 to 5.5 V Power dissipation (QzROM version) In frequency/2 mode Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25 °C) In low-speed mode Std. 18 μW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C) Power dissipation (Flash memory version) In frequency/2 mode Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25 °C) In low-speed mode Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25 °C) Input/Output characteristics Input/Output withstand voltage VCC Output current 10 mA Operating temperature range -20 to 85 °C Device structure CMOS silicon gate Package 64-pin plastic molded LQFP |
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