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RJK0362DSP Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0362DSP Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  REJ03G1653-0501 Rev.5.01 Apr 24, 2008 Page 1 of 6 RJK0362DSP Silicon N Channel Power MOS FET Power Switching REJ03G1653-0501 Rev.5.01 Apr 24, 2008 Features • Capable of 5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 5.0 mΩ typ. (at VGS = 10 V) • Pb-free Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain G D SS S D DD 4 1 23 56 7 8 1 2 3 4 5 6 7 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 16 A Drain peak current ID(pulse) Note1 128 A Body-drain diode reverse drain current IDR 16 A Avalanche current IAP Note 2 15 A Avalanche energy EAR Note 2 22.5 mJ Channel dissipation Pch Note3 2.0 W Channel to ambient thermal impedance θch-a Note3 62.5 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s |
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