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RJK0389DPA REJ03G1722-0102 Rev.1.02 Jul 25, 2008 Page 3 of 4 • MOS2 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 mA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, ID =1 mA RDS(on) — 6.8 8.9 m Ω ID = 10 A, VGS = 10 V Note4 Static drain to source on state resistance RDS(on) — 10.5 14.7 m Ω ID = 10 A, VGS = 4.5 V Note4 Forward transfer admittance |yfs| — TBD — S ID = 10 A, VDS = 10 V Note4 Input capacitance Ciss — 1000 — pF Output capacitance Coss — 240 — pF Reverse transfer capacitance Crss — 100 — pF VDS = 10 V VGS = 0 f = 1 MHz Gate Resistance Rg — 4.5 — Ω Total gate charge Qg — 7.2 — nC Gate to source charge Qgs — 2.9 — nC Gate to drain charge Qgd — 2.2 — nC VDD = 10 V VGS = 4.5 V ID = 20 A Turn-on delay time td(on) — TBD — ns Rise time tr — TBD — ns Turn-off delay time td(off) — TBD — ns Fall time tf — TBD — ns VGS = 10 V, ID = 10 A VDD ≅ 10 V RL = 1.0 Ω Rg = 4.7 Ω Schottky Barrier diode forward voltage VF — 0.44 — V IF = 2 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 12 — ns IF = 20 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
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