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RJK1021DPE-00-J3 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK1021DPE-00-J3
Description  N-Channel Power MOSFET High-Speed Switching Use
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK1021DPE-00-J3 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK1021DPE
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
Page 3 of 6
Main Characteristics
120
100
80
60
40
20
0
50
100
150
200
100
80
60
40
20
0
24
6
8
10
100
80
60
40
20
0
24
6
8
10
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
30
25
20
15
10
04
8
12
16
20
1
10
100
10
100
1
Gate to Source Voltage VGS (V)
Drain to Source on State Resistance vs.
Gate to Source Voltage
Drain Current ID (A)
Drain to Source on State Resistance
vs. Drain Current
35
ID = 70 A
35 A
Pulse Test
VGS = 10 V
Pulse Test
100
10
1
0.1
1
10
1000
0.01
0.1
1000
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
Ta = 25
°C
100
µs
10
µs
Operation in this
area is limited by
R
DS(on)
PW = 10 ms
(1shot)
DC Operation
(Tc = 25
°C)
VGS = 4 V
Pulse Test
4.6 V
5 V
6 V
8 V
10 V
Tc = 75
°C
25
°C
−25°C
VDS = 10 V
Pulse Test
10 A


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