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RJK1525DPJ Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJK1525DPJ Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page  RJK1525DPJ, RJK1525DPE, RJK1525DPF Rev.1.00, Apr.22.2005, page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 150 V Gate to Source voltage VGSS ±30 V Drain current ID 25 A Drain peak current ID (pulse) Note1 50 A Body-Drain diode reverse Drain current IDR 25 A Body-Drain diode reverse Drain peak current IDR (pulse) Note1 50 A Avalanche current IAP Note3 17 A Avalanche energy EAR Note3 21.6 mJ Channel dissipation Pch Note2 75 W Channel to case thermal impedance θch-c 1.67 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to Source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Zero Gate voltage drain current IDSS — — 1 µA VDS = 150 V, VGS = 0 Gate to Source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to Source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 7 12 — S ID = 12.5 A, VDS = 10 V Note4 Static Drain to Source on state resistance RDS(on) — 0.093 0.110 Ω ID = 12.5 A, VGS = 10 V Note4 Input capacitance Ciss — 680 — pF Output capacitance Coss — 150 — pF Reverse transfer capacitance Crss — 22 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 22 — ns Rise time tr — 110 — ns Turn-off delay time td(off) — 45 — ns Fall time tf — 12 — ns ID = 12.5 A VGS = 10 V RL = 6 Ω Rg = 10 Ω Total Gate charge Qg — 18 — nC Gate to Source charge Qgs — 4.5 — nC Gate to Drain charge Qgd — 9 — nC VDD = 120 V VGS = 10 V ID = 25 A Body-Drain diode forward voltage VDF — 0.95 1.50 V IF = 25 A, VGS = 0 Note4 Body-Drain diode reverse recovery time trr — 100 — ns Body-Drain diode reverse recovery charge Qrr — 0.4 — µC IF = 25 A, VGS = 0 diF/dt = 100 A/ µs Notes: 4. Pulse test |
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