HN58C1001 Series

Rev.8.00, Nov. 27.2003, page 7 of 21

Write Cycle

Parameter

Symbol

Min*

2

Typ

Max

Unit

Test conditions

Address setup time

t

AS

0





ns

Address hold time

t

AH

150





ns

CE to write setup time (WE controlled)

t

CS

0





ns

CE hold time (WE controlled)

t

CH

0





ns

WE to write setup time (CE controlled)

t

WS

0





ns

WE hold time (CE controlled)

t

WH

0





ns

OE to write setup time

t

OES

0





ns

OE hold time

t

OEH

0





ns

Data setup time

t

DS

100





ns

Data hold time

t

DH

10





ns

WE pulse width (WE controlled)

t

WP

250





ns

CE pulse width (CE controlled)

t

CW

250





ns

Data latch time

t

DL

300





ns

Byte load cycle

t

BLC

0.55



30

µs

Byte load window

t

BL

100





µs

Write cycle time

t

WC

—



10*

3

ms

Time to device busy

t

DB

120





ns

Write start time

t

DW

150*

4





ns

Reset protect time

t

RP

100





µs

Reset high time*

5

t

RES

1





µs

Notes: 1. t

no longer driven.

2. Use this device in longer cycle than this value.

3. t

automatically completes the internal write operation within this value.

4. Next read or write operation can be initiated after t

5. This parameter is sampled and not 100

% tested.

6. A7 to A16 are page addresses and must be same within the page write operation.

7. See AC read characteristics.