HAF2001 datasheet(6/9 Pages) RENESAS | Silicon N Channel MOSFET Series Power Switching

Part Name

Description

HAF2001

Silicon N Channel MOSFET Series Power Switching ( 9 Page)

RENESAS

6 page

HAF2001

Rev.7.00 Apr 27, 2006 page 6 of 8

Gate to Source Voltage vs.

Shutdown Time of Load-Short Test

0.1 0.2

0.5 1

10 20

50 100

Shutdown Time of Load-Short Test PW (ms)

9 V

12 V

VDD = 36 V

24 V

200

Gate to Source Voltage

VGS (V)

100

120

140

160

180

246810

Shutdown Case Temperature vs.

Gate to Source Voltage

ID = 5 A

TTL Drive Characteristics

Gate Series Resistance RG (kΩ)

0.01 0.03

0.1

0.3

1.0

0.8

0.6

0.4

0.2

ID = 5 A

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

0.3

0.1

0.03

0.01

100

1 m

10 m

100 m

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

PDM

D =

θch – c (t) = γ s (t) • θch – c

θch – c = 2.50°C/W, Tc = 25°C

1 2 3 4 5 6 7 8 9

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