HAF2001 datasheet(3/9 Pages) RENESAS | Silicon N Channel MOSFET Series Power Switching

3 page

HAF2001

Rev.7.00 Apr 27, 2006 page 3 of 8

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

ID1

—

VGS = 3.5 V, VDS = 2 V

Drain current

ID2

—

VGS = 1.2 V, VDS = 2 V

Drain to source breakdown voltage

V (BR) DSS

—

ID = 10 mA, VGS = 0

V (BR) GSS

—

IG = 100

µA, VDS = 0

Gate to source breakdown voltage

V (BR) GSS

–2.8

—

IG = –100

µA, VDS = 0

IGSS1

—

100

µA

VGS = 8 V, VDS = 0

IGSS2

—

µA

VGS = 3.5 V, VDS = 0

IGSS3

—

µA

VGS = 1.2 V, VDS = 0

Gate to source leak current

IGSS4

—

–100

µA

VGS = –2.4 V, VDS = 0

IGS (op) 1

—

0.8

—

VGS = 8 V, VDS = 0

Input current (shut down)

IGS (op) 2

—

0.35

—

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

250

µA

VDS = 50 V, VGS = 0

Gate to source cutoff voltage

VGS (off)

1.0

—

2.25

ID = 1 mA, VDS = 10 V

RDS (on)

—

Ω

ID = 10 A, VGS = 4 V

Note 3

Static drain to source on state resistance

RDS (on)

—

Ω

ID = 10 A, VGS = 10 V

Note 3

Forward transfer admittance

|yfs|

—

ID = 10 A, VDS = 10 V

Note 3

Output capacitance

Coss

—

630

—

VDS = 10 V, VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

7.5

—

µs

Rise time

—

µs

Turn-off delay time

td (off)

—

µs

Fall time

—

µs

ID = 5 A

VGS = 5 V

RL = 6

Ω

Body-drain diode forward voltage

VDF

—

1.0

—

IF = 20 A, VGS = 0

Body-drain diode reverse recovery time

trr

—

110

—

IF = 20 A, VGS = 0

diF/dt = 50 A/

µs

tos1

—

1.8

—

VGS = 5 V, VDD = 12 V

Over load shut down operation time

Note4

tos2

—

0.7

—

VGS = 5 V, VDD = 24 V

Notes: 3. Pulse test

4. Include the time shift based on increasing of channel temperature when operate under over load condition.

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