HAF2002 datasheet(5/9 Pages) RENESAS

Part #	HAF2002

Description	Silicon N Channel MOSFET Series Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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HAF2002

Rev.3.00 Sep 07, 2005 page 5 of 8

0.10

–40

0

40

80

120

160

Case Temperature

Tc (°C)

0

0.02

0.04

0.06

0.08

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

10 V

VGS = 4 V

ID = 20 A

5 A, 10 A

10 A

5 A

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

100

50

10

20

5

1

2

0.5

1

2

5

10

20

50

Tc = –25°C

75°C

VDS = 10 V

Pulse Test

25°C

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

0.5

1

2

5

10

20

50

1000

500

200

50

100

20

10

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

0

10

20

304050

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

10000

3000

1000

300

100

30

10

Coss

VGS = 0

f = 1 MHz

50

0

Source to Drain Voltage VSD (V)

0

10

20

30

40

Reverse Drain Current vs.

Source to Drain Voltage

0.4

0.8

1.2

1.6

2.0

0 V

VGS = 5 V

100

50

20

5

10

2

1

0.2

0.5

2

10

1

5

20

50

0.1

Drain Current

ID (A)

Switching Characteristics

tf

tr

td(off)

td(on)

Pulse Test

VGS = 5 V, VDD = 30 V

PW = 300

µs, duty ≤ 1 %

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