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HAF2014 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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HAF2014 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 8 page Rev.3.00 Apr 27, 2006 page 1 of 7 HAF2014 Silicon N Channel MOS FET Series Power Switching REJ03G1140-0300 (Previous: ADE-208-953) Rev.3.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Latch type shut-down operation (Need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) Gate resistor Tempe- rature Sensing Circuit Latch Circuit Gate Shut- down Circuit D S G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 |
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