STTH802CFP datasheet(3/8 Pages) STMICROELECTRONICS

Part #	STTH802CFP

Description	HIGH EFFICIENCY ULTRAFAST DIODE

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STTH802/CT/CB/CFP

3/8

0

1

2

3

4

5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I

(A)

F(av)

δ = 0.05 δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

T

δ=tp/T

tp

P

(W)

F(av)

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

0

10

20

30

40

50

60

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P= 5 W

P= 2 W

P = 10W

I (A)

M

δ

T

δ=tp/T

tp

Fig. 2: Peak current versus form factor (per diode).

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

V

(V)

FM

Tj=25°C

Maximum values

Tj=125°C

Maximum values

Tj=125°C

Maximum values

Tj=125°C

Typical values

Tj=125°C

Typical values

I

(A)

FM

Fig. 3:

Forward voltage drop versus forward

current (per diode).

0.0

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

tp(s)

Zth(j-c) / Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

δ=tp/T

tp

Fig. 4-2: Relative variation of thermal impedance

junction to case versus duration (TO-220FPAB).

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c) / Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

δ=tp/T

tp

Fig. 4-1: Relative variation of thermal impedance

junction to case versus pulse duration (TO-220AB,

DPAK).

0

10

20

30

40

50

60

70

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

I (A)

M

IM

t

δ=0.5

Fig. 5-1:

Non repetitive surge peak forward

current versus overload duration per diode

(TO-220AB, DPAK).

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