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CY20AAJ-8F-T13 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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CY20AAJ-8F-T13 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 5 page CY20AAJ-8F Rev.1.00, Aug.20.2004, page 3 of 4 Application Example Vtrig Trigger Signal VG IGBT Gate Voltage IXe Xe Tube Current RG 30 Ω VCE VCM CM Vtrig VG IGBT IXe + – VCM ICP CM VGE 330 V 120 A 330 µF 5 V Recommended Operation Conditions 350 V 130 A 400 µF — Maximum Operation Conditions Precautions on Usage 1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is satisfied.) 3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 130 A : full luminescence condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. |
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