CY20AAJ-8F

Rev.1.00, Aug.20.2004, page 3 of 4

Application Example

Vtrig

Trigger Signal

IGBT

Gate Voltage

IXe

Xe Tube Current

30

Ω

Vtrig

IGBT

IXe

+

–

330 V

120 A

330

µF

5 V

Recommended Operation

Conditions

350 V

130 A

400

µF

—

Maximum Operation

Conditions

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

Ω, it is

satisfied.)

≤ 130 A : full luminescence

under full luminescence condition is over 3 seconds.

4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours.