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FS30AS-2-T13 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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FS30AS-2-T13 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00 Aug 07, 2006 page 1 of 6 FS30AS-2 High-Speed Switching Use Nch Power MOS FET REJ03G1411-0200 (Previous: MEJ02G0100-0101) Rev.2.00 Aug 07, 2006 Features • Drive voltage : 10 V • V DSS : 100 V • r DS(ON) (max) : 100 m Ω • I D : 30 A • Integrated Fast Recovery Diode (TYP.) : 95 ns Outline RENESAS Package code: PRSS0004ZA-A (Package name: MP-3A) 1. Gate 2. Drain 3. Source 4. Drain 1 1 3 3 2, 4 2 4 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Symbol Ratings Unit Conditions Drain-source voltage VDSS 100 V VGS = 0 V Gate-source voltage VGSS ±20 V VDS = 0 V Drain current ID 30 A Drain current (Pulsed) IDM 120 A Avalanche drain current (Pulsed) IDA 30 A L = 100 µH Source current IS 30 A Source current (Pulsed) ISM 120 A Maximum power dissipation PD 35 W Channel temperature Tch – 55 to +150 °C Storage temperature Tstg – 55 to +150 °C Mass — 0.32 g Typical value |
Similar Part No. - FS30AS-2-T13 |
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Similar Description - FS30AS-2-T13 |
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