HAT2285WP datasheet(7/10 Pages) RENESAS

Part #	HAT2285WP

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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7 / 10 page

HAT2285WP

Rev.3.00 Apr 05, 2006 page 7 of 9

0.1 0.2

1

2

10 20

50 100

50

100

10

20

2

5

1

0.2

0.5

0.1

0.5

5

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V

Pulse Test

25

°C

Tc = –25

°C

75

°C

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

50

40

30

20

10

–25

0

25

50

75

100 125 150

0

1 A, 2 A, 5 A

10 V

Pulse Test

0.1

0.3

1

3

10

30

100

10

20

2

50

5

1

0

5

10

15

20

25

30

2000

5000

10000

1000

100

200

500

50

40

30

20

10

0

10

8

6

4

2

10

20

30

40

50

0

20

50

10

2

1

5

0.1 0.2

1

2

10 20

50 100

20

50

10

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = 22 A

VDS

VGS

tr

td(on)

td(off)

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nC)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

tf

VGS = 10 V, VDD = 10 V

Rg =4.7

Ω, duty ≤ 1 %

0.5

5

100

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

VDD = 25 V

10 V

5 V

VDD = 25 V

10 V

5 V

1 A, 2 A, 5 A

VGS = 4.5 V

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