HAT3006R datasheet(7/11 Pages) RENESAS

Part #	HAT3006R

Description	Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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7 / 11 page

HAT3006R

Rev.8.00 Sep 07, 2005 page 7 of 10

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

20

10

2

5

1

0.2

0.5

–0.2

–0.5

–1

–2

–5

–10 –20

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

–0.1 –0.2

–0.5

–1

–2

–5

–10

1000

500

200

50

100

20

10

0

–10

–20

–30

–40

–50

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

10000

3000

1000

300

100

30

10

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

0

Gate Charge

Qg (nc)

0

–20

–16

–12

–8

–4

–50

–40

–30

–20

–10

Dynamic Input Characteristics

816

24

32

40

VDS

VGS

ID = –4.5 A

500

200

100

20

50

10

5

–0.2

–0.5

–1

–2

–5

–10

–0.1

tf

tr

td(off)

td(on)

Drain Current

ID (A)

Switching Characteristics

–20

0

–4

–8

–12

–16

0

Source to Drain Voltage

VSD

(V)

Reverse Drain Current vs.

Source to Drain Voltage

–0.4

–0.8

–1.2

–1.6

–2.0

Pulse Test

0, 5 V

VGS = –5 V

Tc = –25°C

75°C

VDS = –10 V

Pulse Test

25°C

di / dt = 20 A /

µs

VGS = 0, Ta = 25°C

VDD = –5 V

–10 V

–25 V

VDD = –25 V

–10 V

–5 V

VGS = –4 V, VDD = –10 V

PW = 3

µs, duty ≤ 1 %

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