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2SH27 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SH27 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 10 page 2SH27 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to Emitter voltage V CES 600 V Gate to Emitter voltage V GES ±20 V Collector current I C 15 A Collector peak current ic(peak) 30 A Collector dissipation P C Note1 50 W Channel temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I CES — — 100 µAV CE = 600V, VGE = 0 Gate to emitter leak current I GES —— ±1 µAV GE = ± 20 V, VCE = 0 Gate to emitter cutoff voltage V GE(off) 6.0 — 8.0 V I C = 15mA, VCE = 10V Collector to emitter saturation voltage V CE(sat) — 2.1 2.6 V I C = 15A, VGE = 15V Input capacitance Cies — 920 — pF V CE = 10V, V GE = 0 f = 1MHz Switching time t r — 150 — ns I C = 15A t on — 220 — ns R L = 20 Ω t f — 300 600 ns V GS = ±15V t off — 410 820 ns Rg = 50 Ω |
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