2SH27 datasheet(4/10 Pages) RENESAS

Part #	2SH27

Description	Silicon N Channel IGBT High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2SH27

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to Emitter voltage

V

CES

600

V

Gate to Emitter voltage

V

GES

±20

V

Collector current

I

C

15

A

Collector peak current

ic(peak)

30

A

Collector dissipation

P

C

Note1

50

W

Channel temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector

current

I

CES

—

100

µAV

CE = 600V, VGE = 0

Gate to emitter leak current

I

GES

——

±1

µAV

GE = ± 20 V, VCE = 0

Gate to emitter cutoff voltage

V

GE(off)

6.0

—

8.0

V

I

C = 15mA, VCE = 10V

Collector to emitter saturation

voltage

V

CE(sat)

—

2.1

2.6

V

I

C = 15A, VGE = 15V

Input capacitance

Cies

—

920

—

pF

V

CE = 10V,

V

GE = 0

f = 1MHz

Switching time

t

r

—

150

—

ns

I

C = 15A

t

on

—

220

—

ns

R

L = 20 Ω

t

f

—

300

600

ns

V

GS = ±15V

t

off

—

410

820

ns

Rg = 50

Ω

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2SH27 Datasheet(PDF) 4 Page - Renesas Technology Corp

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