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HAT3029R-EL-E Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # HAT3029R-EL-E
Description  Silicon N/P Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3029R-EL-E Datasheet(HTML) 4 Page - Renesas Technology Corp

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HAT3029R
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 4 of 9
Case Temperature Tc (
°C)
Static Drain to Source on State Resistance
vs. Temperature
100
80
60
40
20
-25
0
50
25
100
75
125 150
0
ID = 2 A, 5 A, 10 A
2 A, 5 A, 10 A
VGS = 10 V
Pulse Test
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
330
0.1
1
10
100
0.3
10
100
1000
1
Tc = –25
°C
VDS = 10 V
Pulse Test
75
°C
25
°C
Reverse Drain Current IDR (A)
Body–Drain Diode Reverse
Recovery Time
1
10
100
100
20
50
10
0.1
di/dt = 100 A/
µs
VGS = 0, Ta = 25°C
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
010
515
20
25
30
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
Gate Charge Qg (nc)
Dynamic Input Characteristics
50
40
30
20
10
0
20
16
12
8
4
246
8
10
0
ID = 6 A
VGS
VDS
VDD = 25 V
10 V
5 V
VDD = 25 V
10 V
5 V
Drain Current ID (A)
Switching Characteristics
100
10
1
110
0.1
100
1000
VGS = 10 V, VDS = 10 V
Rg = 4.7
Ω, duty ≤ 1 %
td(on)
td(off)
tr
tf
4.5 V


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