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HAT2201WP-EL-E Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT2201WP-EL-E Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page HAT2201WP REJ03G1679-0300 Rev.3.00 May 27, 2008 Page 4 of 7 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature 100 80 60 40 20 -25 0 50 25 100 75 125 150 0 1 A, 2 A, 5 A ID = 1 A, 2 A, 5 A VGS = 8 V 10 V Pulse Test Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 330 0.1 1 10 100 0.3 10 100 1 0.1 Tc = –25°C VDS = 10 V Pulse Test 75°C 25°C Reverse Drain Current IDR (A) Body–Drain Diode Reverse Recovery Time 1 10 100 100 20 50 10 0.1 di/dt = 100 A/ µs VGS = 0, Ta = 25°C Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 20 30 50 40 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz Gate Charge Qg (nc) Dynamic Input Characteristics 250 200 150 100 50 0 20 16 12 8 4 816 24 32 40 0 ID = 15 A VGS VDS VDS = 100 V 50 V 25 V VDS = 100 V 50 V 25 V Drain Current ID (A) Switching Characteristics 100 10 1 1 10 100 0.1 1000 VGS = 10 V, VDS = 30 V Rg = 4.7 Ω, duty ≤ 1 % td(on) td(off) tr tf |
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