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HAT2210R Datasheet(PDF) 4 Page - Renesas Technology Corp |
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HAT2210R Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 12 page HAT2210R, HAT2210RJ Rev.3.00, Mar.15.2005, page 4 of 11 Main Characteristics • MOS1 4.0 3.0 2.0 1.0 0 50 100 150 200 100 10 1 110 100 20 10 05 10 20 10 0 24 68 10 0.1 1000 VGS = 2.8 V Tc = 75 °C 25 °C −25°C Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test 3.6 V 3.2 V 4.5 V 10 V 0.1 0.01 100 µs 1 ms PW = 10 ms (1shot) Ta = 25 °C 1 shot Pulse 10 µs Note 5 DC Opera tion (PW ≤ 10 s) Operation in this area is limited by RDS(on) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) 200 150 100 50 0 48 12 16 20 0.1 1 10 10 1 ID = 5 A 2 A Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Pulse Test 1 A 100 100 VGS = 4.5 V 10 V |
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Similar Description - HAT2210R |
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