HAT2210R datasheet(5/12 Pages) RENESAS

Part #	HAT2210R

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 12 page

HAT2210R, HAT2210RJ

Rev.3.00, Mar.15.2005, page 5 of 11

0.1 0.2

1

2

10 20

50 100

50

100

10

20

2

5

1

0.2

0.5

0.1

0.5

5

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V

Pulse Test

25

°C

Tc = –25

°C

75

°C

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

50

40

30

20

10

-25

0

25

50

75

100 125 150

0

ID = 1 A, 2 A

1 A, 2 A, 5 A

VGS = 4.5 V

10 V

Pulse Test

5 A

0.1

0.3

1

3

10

30

100

10

20

2

50

5

1

0

5

10

15

20

25

30

2000

5000

10000

1000

100

200

500

50

40

30

20

10

0

20

16

12

8

4

8

12

16

20

0

20

50

10

2

1

5

0.1 0.2

1

2

10 20

50 100

20

50

10

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

VDD = 25 V

10 V

5 V

ID = 7.5 A

VDS

VGS

tr

td(on)

td(off)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nC)

Dynamic Input Characteristics

Drain Current

ID (A)

Switching Characteristics

tf

VGS = 10 V, VDD = 10 V

Rg =4.7

Ω, duty ≤ 1 %

0.5

5

100

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

VDD = 25 V

10 V

5 V

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