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CR03AM-16 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # CR03AM-16
Description  Thyristor Low Power Use
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

CR03AM-16 Datasheet(HTML) 5 Page - Renesas Technology Corp

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CR03AM-16
Rev.1.00, Aug.20.2004, page 5 of 7
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (k
Ω)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (k
Ω)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/
µs)
160
120
60
40
20
140
100
80
0
120
–40
040
80
–20
20
60
100
RGK = 1k
Ω
23
10–1
57 100 23 5 7 101 23 5 7 102
160
0
80
100
120
140
40
60
20
Tj = 110°C
23
100
57 101 23 5 7 102 23 5 7 103
200
180
0
80
100
120
160
140
40
60
20
Tj = 25°C
RGK = 1k
Ω
Tj = 110°C
23
10–2
10–1
57
2 3 57 100 23 5 7 101
0
100
200
300
400
500
160
120
60
40
20
140
100
80
0
120
–40
040
80
–20
20
60
100
60
–20
–40
–60
0
20 40
80 100 120 140
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
RGK = 1k
Ω
VD = 12V, Tj = 25°C
# 2
# 1
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example
Typical Example
Distribution
IGT(25°C) = 35
µA
Typical Example
Typical Example
IGT(25°C) IH(1k
Ω)
10
µA
26
µA
1.0mA
1.1mA
# 1
# 2
Typical Example


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